Part Number Hot Search : 
NM60N OM6002SR P4KE220A TSC114A C1501 2SC1842 BF420 21045515
Product Description
Full Text Search
 

To Download HSCH-9101 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  agilent HSCH-9101/9201/9251 gaas beam lead schottky barrier diodes data sheet description the HSCH-9101 single, the hsch-9201 series pair, and the hsch-9251 anti-parallel pair are advanced gallium arsenide schottky barrier diodes. these devices are fabricated utilizing molecular beam epitaxy (mbe) manufacturing techniques and feature rugged construction and consistent electrical perfor- mance. a polyimide coating provides scratch protection and resistance to contamination. features gold tri-metal system for improved reliability low capacitance low series resistance high cutoff frequency polyimide passivation multiple configurations HSCH-9101 280 (11.0) 200 (7.8) 9 (0.4) 7 (0.3) 125 (4.9) 115 (4.5) 270 (10.6) 190 (7.5) 636 (25.0) 626 (24.6) l = 0.1 nh 183 (7.2) 178 (7.0) 60 (2.4) 50 (2.0) hsch-9201 280 (11.0) 200 (7.8) 9 (0.4) 7 (0.3) 115 (4.5) 105 (4.1) 346 (13.6) 266 (10.5) 712 (28.0) 702 (27.6) l = 0.1 nh 183 (7.2) 178 (7.0) 60 (2.4) 50 (2.0) hsch-9251 junction side up 290 50 (11.0) 200 (7.8) 9 (0.4) 7 (0.3) 125 (4.9) 115 (4.5) 280 50 (10.6) 190 (7.5) 712 (28.0) 702 (27.6) l = 0.1 nh dimensions in m (1/1000 inch) 183 (7.2) 178 (7.0) 60 (2.4) 50 (2.0)
2 applications this line of schottky diodes is optimized for use in mixer applications at millimeter wave frequencies. some suggested mixer types are single ended and single balanced for the single and series pair. the anti-parallel pair is ideal for harmonic mixers. assembly techniques diodes are esd sensitive. esd preventive measures must be em ployed in all aspects of storage, handling, and assembly. diode esd precautions, handling considerations, and bonding methods are critical factors in successful diode performance and reliability. agilent application note #55, beam lead diode bonding and handling procedures provides basic information on these subjects. maximum ratings power dissipation at t lead = 25 c........................... 75 mw per junction measured in an infinite heat sink derated linearly to zero at maximum rated temperature operating temperature .................................................... -65 c to +150 c storage temperature ........................................................ -65 c to +150 c mounting temperature ........................................... 235 c for 10 seconds minimum lead strength ................................................................. 6 grams electrical specifications at t a = 25 c part number symbol parameters and HSCH-9101 hsch-9201 hsch-9251 test conditions units min. typ. max. min. typ. max. min. typ. max. c j [1] junction capacitance pf 0.040 0.050 0.040 0.050 0.040 v r = 0 v, f = 1 mhz ? c j [1] junction capacitance variation pf 0.005 0.010 v r = 0 v, f = 1 mhz r s [2] series resistance w 6 6 6 v f1 forward voltage mv 700 800 700 800 700 800 i f = 1 ma v f10 forward voltage mv 800 850 800 850 800 850 i f = 10 ma ? v f forward voltage variation mv 15 15 i f = 1 ma and 10 ma v br reverse breakdown voltage v 4.5 4.5 v r = v br measure i r 10 a (per junction) notes: 1. junction capacitance is determined by measuring total device capacitance and subtracting the calculated parasitic capacitance (0.035 pf). 2. series resistance is determined by measuring the dynamic resistance and subtracting the calculated junction resistance of 6 ? .
3 100 10 1 0.1 0.01 forward voltage (v) figure 1. typical forward characteristics for HSCH-9101, hsch-9201, and hsch-9251. forward current (ma) 0 0.2 0.4 0.6 1.2 1.0 0.8 +125 c +25 c -55 c figure 2. typical noise figure and i.f. impedance vs. local oscillator power, for HSCH-9101 and hsch-9201. noise figure (db) if impedance ( ? ) 0 6 local oscillator power (dbm) 810 300 8 7 2 100 200 14 46 12 z if nf spice parameters parameter units hsch-9xxx b v v5 c j0 pf 0.04 e g ev 1.43 i bv a 10e-5 i s a 1.6 x 10e-13 n 1.20 r s ? 5 p b v 0.7 p t 2 m 0.5 typical parameters this data sheet contains a variety of typical and guaranteed performance data. the information supplied should not be interpret ed as a complete list of circuit specifications. in this data sheet the term typical refers to the 50th percentile performance. for additional information contact your local agilent technologies sales representat ive.
www.semiconductor.agilent.com data subject to change. copyright ? 2001 agilent technologies, inc. obsoletes 5965-8851e october 18, 2001 5988-1897en


▲Up To Search▲   

 
Price & Availability of HSCH-9101

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X